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600V 20A 0.220 APT20N60BCF APT20N60SCF APT20N60BCFG* APT20N60SCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C OLMOS O
Power Semiconductors
Super Junction FREDFET
TO -2 47
D3PAK
* Ultra Low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * Extreme dv/dt Rated
* Intrinsic Fast-Recovery Body Diode * Extreme Low Reverse Recovery Charge * Ideal For ZVS Applications * Popular TO-247 or Surface Mount D3 Package
G S D
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current
1
All Ratings: TC = 25C unless otherwise specified.
APT20N60BCF(G)_SCF(G)
UNIT Volts
600 20 13 60 30 208 1.67 -55 to 150 260 80 20
7 4
Amps
Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 20A, TJ = 125C) Avalanche Current
7
Volts Watts W/C C V/ns Amps mJ
Repetitive Avalanche Energy
1 690
Single Pulse Avalanche Energy
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN 600
TYP
MAX
UNIT Volts
(VGS = 10V, ID = 13A)
0.220 2.1 1700 100 3 4 5
Ohms A nA Volts
5-2005 050-7235 Rev A
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150C) Gate-Source Leakage Current (VGS = 20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgd td(on) td(off) tf Eon Eoff Eon Eoff Symbol IS VSD
dv
APT20N60BCF(G)_SCF(G)
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 20A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 380V ID = 20A @ 25C RG = 3.6
6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
2520 670 40 95 18 55 12 15 60 6.4 180 60 315 80
MIN TYP MAX
Qgs
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
dv
1 2
nC
tr
ns
INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 20A, RG = 5 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 20A, RG = 5
6
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
20 60 1.2 40
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN 180
ISM
(Body Diode) (VGS = 0V, IS = -20A)
5
/dt
/dt
t rr Q rr IRRM
Reverse Recovery Time (IS = -20A, di/dt = 100A/s) Reverse Recovery Charge (IS = -20A, /dt = 100A/s) Peak Recovery Current (IS = -20A, /dt = 100A/s) Characteristic Junction to Case Junction to Ambient
di di
260 1.4 2.5 15 18
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.60 62
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.70 , THERMAL IMPEDANCE (C/W) 0.60 0.50 0.40 0.30 0.20 0.10 0 0.7 0.5 0.3
4 Starting Tj = +25C, L = 13.80mH, RG = 25, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID20A di/dt 700A/s VR 480V TJ 125C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f
0.9
5-2005
Note:
PDM
050-7235 Rev A
t1 t2
JC
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
Z
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
60 50 40
APT20N60BCF(G)_SCF(G)
VGS = 15 &10 V 8V
RC MODEL Junction temp. (C) 0.322 Power (watts) 0.276 Case temperature. (C) 0.0728F 0.00498F
7.5V 30 7V 20 6.5V 10 0 6V 5.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
80
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 1.40 1.30 1.20 1.10 1.00 0.90 0.80
VGS=20V
NORMALIZED TO VGS = 10V @ 13A
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
ID, DRAIN CURRENT (AMPERES)
70 60 50 40 30 20 10 0
VGS=10V
TJ = -55C
TJ = +25C
TJ = +125C
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
18
16 14 12 10 8 6 4 2 0 25
BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
20
1.15
5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
ID, DRAIN CURRENT (AMPERES)
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
3.0 2.5 2.0 1.5 1.0 0.5 0 -50
I = 10A
D
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2
0.90 -50
V
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
GS
= 10V
1.1 1.0 0.9 0.8 0.7 0.6 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7235 Rev A
5-2005
60 ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY R (ON) DS
20,000 10,000
APT20N60BCF(G)_SCF(G)
5
C, CAPACITANCE (pF)
10
100S
Ciss 1,000 Coss 100
1 TC =+25C TJ =+150C SINGLE PULSE
1mS
10mS
Crss
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
.1
1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = 20A
D
10
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
200 100
TJ =+150C TJ =+25C
12
VDS=120V VDS=300V
8
VDS=480V
10
4
20 40 60 80 100 120 140 160 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 100
90 80
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 30
25 20
td(off)
td(on) and td(off) (ns)
70 60 50 40 30 20 10 0
V
R
G
= 5
T = 125C J L = 100H
tr and tf (ns)
DD
= 400V
tf
15 10
V
DD G
= 400V
R
= 5
T = 125C J L = 100H
tr
td(on)
5 0
0
5
10
FIGURE 14, DELAY TIMES vs CURRENT
600 500
V
DD G
15 20 ID (A)
25
30
35
0
5
10
FIGURE 15, RISE AND FALL TIMES vs CURRENT
600 500
15 20 ID (A)
25
30
35
= 400V
R
= 5
SWITCHING ENERGY (mJ)
L = 100H
SWITCHING ENERGY (mJ)
T = 125C
J
400 300 200 100 0
E
diode reverse recovery.
on
includes
Eon
400
Eoff
Eon
300 200 100 0
V = 400V
5-2005
DD
Eoff
I = 20A
D
T = 125C L = 100H E diode reverse recovery.
on J
050-7235 Rev A
includes
15 20 25 30 35 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10
10 20 30 40 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
Typical Performance Curves
Gate Voltage 10% TJ125C
APT20N60BCF(G)_SCF(G)
90%
Gate Voltage
td(on) tr
Drain Current 90% 5% 10% 5% Drain Voltage
td(off) tf
Drain Voltage
90% 10% 0 Switching Energy
TJ125C
Drain Current
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DQ60
VDD
ID
VDS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
Drain (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D PAK Package Outline
e3 100% Sn
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
3
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Drain
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Source Drain Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7235 Rev A
Gate Drain Source
Heat Sink (Drain) and Leads are Plated
5-2005
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055)
3.81 (.150) 4.06 (.160) (Base of Lead)

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